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| Trench MOSFETs | Shielded-gate MOSFETs | |||
| Condition | RDS(on) Vg=10V, 200A/cm2 | |||
|---|---|---|---|---|
| VGs (V) | 100 | 100V | ||
| RDS(on) Ω | 11 | Reducing 40% | ||
| Qgd (nC) | 46 | Reducing 40% | ||
| CRSS (pF) | 110 | Reducing 20-30% | ||
| Device | BVDD(V) | RDS@10Vgs(mR) | ||
| SGT Family | 75 | 3.5 | ||
| SGT Family | 85 | 4 | ||
| SGT Family | 100 | 4 |
| Device | BVDD(V) | RDS@10Vgs(mR) | ||
| SGT Family | 75 | 3.5 | ||
| SGT Family | 85 | 4 | ||
| SGT Family | 100 | 4 |
| Device | BVDD(V) | RDS@10Vgs(mR) | ||
| SGT Family | 75 | 3.5 | ||
| SGT Family | 85 | 4 | ||
| SGT Family | 100 | 4 |
| Device | BVDD(V) | RDS@10Vgs(mR) | RDS@4.5Vgs(mR) | |||
| SGT Family | 45V | 1.5 | 2.5 | |||
| SGT Family | 65V | 5 | 7 | |||
| SGT Family | 100V | 9.8 | 13.5 | |||
| SGT Family | 100V | 4 | 5.7 |
